| PART |
Description |
Maker |
| JANTXV1N5532B 1N5519 1N5520 JAN1N5543B JANTX1N5523 |
LOW VOLTAGE AVALANCHE DIODES DO-7
Low Voltage Avalanche Zener
|
MICROSEMI[Microsemi Corporation]
|
| 1N5546 1N5518 1N5518B 1N5519 1N5520 1N5521 1N5522 |
5.1 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Low Voltage Avalanche Zener
Low Voltage Avalanche 500 mW Zener Diodes DO-35
surface mount silicon Zener diodes 17 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| BUP212 |
Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated
|
Infineon Technologies AG
|
| 1N5546C 1N5535D |
0.4W LOW VOLTAGE AVALANCHE DIODES
|
Jinan Gude Electronic Device
|
| GAAB40Z |
Press Fit Avalanche Automotive Rectifier (BOSCH) Avalanche Voltage 24 to 32Volts Current 40 Amps
|
GOOD-ARK Electronics
|
| Q67040-A4231-A2 BUP604 |
From old datasheet system
IGBT (LOW FORWARD VOLTAGE DROP HIGH SWITCHING SPEED LOW TAIL CURRENT LATCH-UP FREE AVALANCHE RATED)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BUP300 Q67078-A4203-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HVP10 |
Controlled avalanche characteristic combined Low forward voltage drop
|
Leshan Radio Company
|
| HVM12 HVM10 HVM15 |
Controlled avalanche characteristic combined Low forward voltage drop
|
Leshan Radio Company
|
| BUP304 Q67078-A4200-A2 |
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL IGBT, TO-218
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
